Data for reference teisseyere-jap-76-2429

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

H. Teisseyere, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, T. D. Moustakas

Journal of Applied Physics 76, 2429 (1994).

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This item is cited by the following items in the database:

  1. Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy

Contributed by A submitted manuscript, on Friday, April 6, 2001 1:29:58 PM

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