Data for reference morkoc-jap-76-1363

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, M. Burns

Journal of Applied Physics 76(3), 1363 (1994).

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This item is cited by the following items in the database:

  1. LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
  2. GaN Based p‐n Structures Grown on SiC Substrates
  3. In-depth Analysis of the Impurities in GaN
  4. Fabrication of GaN mesa structures
  5. Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
  6. Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
  7. Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
  8. Hardness and fracture toughness of bulk single crystal gallium nitride
  9. Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
  10. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
  11. Electrical characteristics of GaN/6H-SiC n-p heterojunctions.
  12. Luminescent properties of gallium nitride layers grown by vapor-phase epitaxy in a chloride system on silicon carbide substrates
  13. Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
  14. Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE
  15. Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD
  16. The role of gaseous species in group-III nitride growth
  17. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
  18. Direct SIMS Determination of the InxGa1-xN Mole Fraction
  19. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  20. Schottky Diodes on MOCVD Grown AlGaN Films.
  21. Paramagnetic defects in GaN
  22. New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type AIIIBV on sapphire substrates
  23. Preparation of Sapphire for High Quality III-Nitride Growth
  24. Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces

Contributed by Philippe Vermaut from 192.93.101.126 on Tuesday, June 11, 1996 5:01:19 AM
Modified by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 3, 1996 6:01:27 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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