Data for reference sato-jap-75-1405

Transparent and conductive impurity-doped GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method

Hirotoshi Sato, Tadatsugu Minami, Eiji Yamada, Makoto Ishii, Shinzo Takata

Journal of Applied Physics 75(3), 1405 (1994).

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This item is cited by the following items in the database:

  1. Properties of InGaN deposited on Glass at Low Temperature

Contributed by E. Hellman
Modified by S. Strite from internet-gw.zurich.ibm.ch. on Friday, September 20, 1996 9:06:37 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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