Data for reference ashley-jap-35-369

Double Injection in Deep-Lying Impurity Semiconductors

KL Ashley, AG Milnes

Journal of Applied Physics 35, 369 (1994).

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  1. GaN Based p‐n Structures Grown on SiC Substrates

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Wednesday, July 10, 1996 2:54:27 AM

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