Data for reference bykhovski-jap-74-6734

The influence of the strain-induced electric field on the charge distribution in GaN-AlN-GaN structure

Alexei Bykhovski, Boris Gelmont, Michael Shur

Journal of Applied Physics 74(11), 6734 (1993).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. The Polarity of GaN: a Critical Review
  2. The role of piezoelectric fields in GaN-based quantum wells
  3. 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 6:24:36 PM.
© 1998 The Materials Research Society