Data for reference liu-jap-74-6124

Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source

H. Liu, A. C. Frenkel, J. G. Kim, R. M. Park

Journal of Applied Physics 74(10), 6124 (1993).

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This item cites the following items in the database:

  1. Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
  2. Low temperature growth of GaN and AlN on GaAs using metalorganics and hydrazine
  3. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride
  4. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Properties of cubic GaN grown on GaAs
  5. GaN, AlN, and InN: A review
  6. Properties of gallium nitride
  7. Perspective on gallium nitride
  8. Hot electron microwave conductivity of wide band gap semiconductors

This item is cited by the following items in the database:

  1. Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface

Contributed by E. Hellman
Modified by Eric S. Hellman from 201.225.20.192.in-addr.arpa.
Modified by Eric S. Hellman from nsr.mij.mrs.org.
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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