gelmont-jap-74-1818

Data for reference gelmont-jap-74-1818

Monte Carlo simulation of electron transport in gallium nitride

B. Gelmont, K. Kim, M. Shur

Journal of Applied Physics 74(3), 1818 (1993).

Presented in the paper are the results of an ensemble Monte Carlo simulation of the electron transport in gallium nitride (GaN). The calculation shows that intervalley electron transfer plays a dominant role in GaN in high electric fields leading to a strongly inverted electron distribution and to a large negative differential conductance. Also derived is an analytic expression for the polar optical momentum relaxation time for phonon energies larger than the thermal energy. The analytical calculation of the low-field mobility in GaN is in excellent agreement with the Monte Carlo simulation and with the experimental data for different compensation ratios.

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1993JAP....74.1818G
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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