Data for reference kuznia-jap-73-4700

Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates

J. N. Kuznia, M. Asif Khan, D. T. Olson , Ray Kaplan, Jamie Freitas

Journal of Applied Physics 73(9), 4700 (1993).

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This item is cited by the following items in the database:

  1. Alternative N precursors and Mg doped GaN grown by MOVPE
  2. New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
  3. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

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