Data for reference eddy-jap-73-448

Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy

C. R. Eddy, T. D. Moustakas , J. Scanlon

Journal of Applied Physics 73(1), 448 (1993).

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This item is cited by the following items in the database:

  1. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  2. Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition

Contributed by E. Hellman
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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