Data for reference powell-jap-73-189

Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties

R. C. Powell, N.-E. Lee, Y.-W. Kim, J. E. Greene

Journal of Applied Physics 73(1), 189 (1993).

Results are presented of a study of the microstructure, properties, and growth kinetics of epitaxial wurtzite alpha-GaN and zink-blende beta-GaN films grown by reactive-ion MBE on Al2O3(0001) and Al2O3(0 1 -1 2) substrates and on MgO(001), respectively, as a function of Ts (450-800 C), incident N2(+)/Ga flux ratio (1-5), and N2(+) kinetic energy (35-90 eV). Data are presented on the crystalline quality and defect structure, determined using a combination of in situ reflection diffraction, double-crystal XRD, and cross-sectional TEM.

This item is cited by the following items in the database:

  1. Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
  2. Dry patterning of InGaN and InAlN
  3. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  4. Epitaxial growth of cubic GaN and AlN on Si(001)
  5. Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  6. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  7. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1993JAP....73..189P
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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