Data for reference chung-jap-72-651

The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxy

B-C. Chung , M. Gershenzon

Journal of Applied Physics 72(2), 651 (1992).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Yellow Band and Deep levels in Undoped MOVPE GaN.
  2. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
  3. Properties of InGaN deposited on Glass at Low Temperature

Contributed by Andrei Nikolaev from shuttle.ioffe.rssi.ru

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 7:36:57 PM.
© 1998 The Materials Research Society