Data for reference nakamura-jap-71-5543

In situ monitoring and Hall measurements of GaN grown with GaN buffer layers

S. Nakamura, T. Mukai, M. Senoh

Journal of Applied Physics 71(11), 5543 (1992).

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This item is cited by the following items in the database:

  1. Study of GaN films grown by metalorganic chemical vapour deposition
  2. High Resistivity AlxGa1-xN Layers Grown by MOCVD
  3. Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

Contributed by Wim Van der Stricht from intec.rug.ac.be. on Friday, May 31, 1996 3:54:50 AM
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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