Data for reference sasaki-jap-64-4531

Substrate-polarity dependence of metal-organic vapor- phase epitaxy-grown GaN on SiC

T. Sasaki, T. Matsuoka

Journal of Applied Physics 64(9), 4531 (1988).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of Ga-face and N-face GaN films using ZnO Substrates
  3. Physical Properties of Bulk GaN Crystals Grown by HVPE
  4. The Polarity of GaN: a Critical Review
  5. Review of polarity determination and control of GaN

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1988JAP....64.4531S
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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