Data for reference koide-jap-61-4540

Energy band-gap bowing parameter in an AlxGa1- x N alloy

Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, I. Akasaki

Journal of Applied Physics 61(9), 4540 (1987).

Absorption edge for single crystal AlGaN epitaxial layers

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  3. Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  4. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  5. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  6. AlGaN-Based Bragg Reflectors
  7. Solar-Blind AlGaN Heterostructure Photodiodes

Contributed by S. Strite
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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