Data for reference sasaki-jap-61-2533

Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy

Toru Sasaki, Sakae Zembutsu

Journal of Applied Physics 61(7), 2533 (1987).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Alternative N precursors and Mg doped GaN grown by MOVPE
  3. Properties of GaN epilayers grown on misoriented sapphire substrates

Contributed by S. Strite
Modified by Andrei Nikolaev from shuttle.ioffe.rssi.ru

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