Data for reference tansley-jap-59-3241

Optical band gap of indium nitride

T. L. Tansley, C. P. Foley

Journal of Applied Physics 59, 3241 (1986).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of InN by chloride-transport VPE
  3. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  4. Influence of growth rates on properties of InN thin films
  5. InN thin film growth using N2, NH3 and N2-He rf plasma
  6. Epitaxial Growth of InN by Plasma-assisted MOCVD
  7. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  8. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by S. Strite

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