Data for reference yoshida-jap-53-6844

Properties of Al/x/Ga/1-x/N films prepared by reactive molecular beam epitaxy

S. Yoshida, S. Misawa, S. Gonda

Journal of Applied Physics 53, 6844 (1982).

Single-crystal films of the solid solution AlGaN of the entire composition range have been fabricated on sapphire and silicon substrates by reactive molecular beam epitaxy (MBE) at 700 C. The properties of the films have been studied by the reflection high energy electron diffraction technique, X ray diffraction, and electrical and optical measurements. The lattice constant of the film is not a linear function of the composition, and the fundamental absorption edge also shows nonlinear dependence on the composition. The narrow intense peak of the cathodoluminescence concerned with the band to band or shallow impurity band transition, varies from 3.4 to 6 eV with the composition, which suggests the feasibility of AlGaN films grown by reactive MBE for optical devices in the ultraviolet spectral region.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  3. Growth and Doping of AlGaN Alloys by ECR-assisted MBE
  4. High Resistivity AlxGa1-xN Layers Grown by MOCVD
  5. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  6. AlGaN-Based Bragg Reflectors
  7. Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD
  8. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1982JAP....53.6844Y

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