shintani-jap-48-1522

Data for reference shintani-jap-48-1522

Electric properties of GaN light-emitting diodes

A. Shintani, S. Minagawa

Journal of Applied Physics 48, 1522 (1977).

The mechanisms of electrical conduction processes in GaN:Zn, yellow and green light-emitting diodes (LED) were analyzed by considering the I-V characteristics at room temperature and liquid-nitrogen temperature and the temperature dependences of currents through the diodes with a constant forward bias. Diode current transport mechanisms are different above and below 150 K. Forward conduction current I = I1 + I2: below 150 K, I1 dominates the current conduction controlled by tunnel-induced impact ionization and electrons tunnel through a triangular potential barrier at the i-n junction; above 150 K, I2 dominates as a result of electron thermal excitation, tunneling, and impact ionization. Thermal activation energy for excitation depends on the zinc concentration in the i layer. Activation energies of 100 meV for the yellow LED and 14 meV for the green LED were observed. Fermi levels of the i layers for the yellow and green diodes are estimated to locate 0.13 - 0.14 and 0.04 - 0.05 eV below the conduction band, respectively.

This item is cited by the following items in the database:

GaN, AlN, and InN: A review

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1977JAP....48.1522S

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.