Data for reference pankove-jap-47-5387

Photoluminescence of ion-implanted GaN

J. I. Pankove, J. A. Hutchby

Journal of Applied Physics 47, 5387 (1976).

Thirty-five elements were implanted in GaN. Their photoluminescence spectra were measured and compared to those of an unimplanted control sample. Most impurities emit a peak at about 2.15 eV. Mg, Zn, Cd, Ca, As, Hg, and Ag have more characteristic emissions. Zn provides the most efficient recombination center. A set of midgap states is generated during the damage-annealing treatment.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
  3. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure
  4. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1976JAP....47.5387P

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