Data for reference osamura-jap-46-3432

Preparation and optical properties of Ga 1-xIn xN thin films

K. Osamura, S. Naka, Y. Murakami

Journal of Applied Physics 46, 3432 (1975).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals
  3. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  4. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect

Contributed by S. Strite

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