Data for reference lagerstedt-jap-45-2266

Luminescence in epitaxial GaN:Cd

O. Lagerstedt, B. Monemar

Journal of Applied Physics 45, 2266 (1974).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  3. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by S. Strite

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 3:10:31 PM.
© 1998 The Materials Research Society