Data for reference hakki-jap-44-4113

CW degradation at 300 K of GaAs double-heterostructure junction lasers. II. Electronic gain,

B. W. Hakki, T. L. Paoli

Journal of Applied Physics 44, 4113 (1973).

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This item is cited by the following items in the database:

  1. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

Contributed by A submitted manuscript, on Tuesday, March 11, 1997 2:58:05 PM

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