Data for reference yim-jap-44-292

Epitaxially grown AlN and its optical band gap

W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, S. L. Gilbert

Journal of Applied Physics 44, 292 (1973).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
  3. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

Contributed by S. Strite

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