Data for reference camphausen-jap-42-4438

Pressure and temperature dependence of the absorption edge in GaN

D. L. Camphausen, G. A. N. Connell

Journal of Applied Physics 42, 4438 (1971).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  3. Growth and Device Performance of GaN Schottky Rectifiers

Contributed by S. Strite

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