Data for reference eriksson-jap-40-842

Implantation and annealing behavior of group III and V dopants in silicon as studied by the channeling technique

L. Eriksson, J. A. Davies, N. G. E. Johansson, J. W. Mayer

Journal of Applied Physics 40, 842 (1969).

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  1. Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN

Contributed by A submitted manuscript, on Thursday, October 10, 2002 6:41:55 PM

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