1987

• Application of Monte Carlo simulations in the SEM study of heterojunctions

1988

• High efficiency blue LED utilizing GaN film with AlN buffer layer grown by MOVPE

1990

• uv and blue electroluminescence from Al/GaN:Mg/GaN LED treated with low-energy electron beam irradiation (LEEBI)
• Transient capacitance characterization of near-midgap donor-like interface states in AlN/GaAs MIS diodes
• Wide-gap Semiconductor (In,Ga)N

1993

• The Use of Selective Regrowth of HBTs

1994

• Prospects for high-pressure crystal growth of III-V nitrides
• temperature characteristics of SiC diodes

1995

• Properties of GaN Films Grown on A Plane (11(2)over Bar-0) and C Plane (0001) Sapphire
• Epitaxial Growth and Structural, Optical Properties of Cubic GaN on (100) and (111) GaAs Grown by Metalorganic Chemical Vapor Deposition
• Growth and Characterization of P/N Type GaN Grown at Reduced Substrate Temperatures by Plasma Enhanced (pe-) MOCVD
• GaN/Algan Field Effect Transistors for High Temperature Applications
• Some Aspects of GaN Electron Transport Properties
• Stimulated Emission from GaN Grown on SiC
• SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates
• X-Ray Differential diffractometry applied to GaN grown on SiC
• Large Area Growth of GaN Thin Films in a Multi-Wafer Rotating DiskReactor
• Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates

1996

• High-quality GaN grown directly on SiC by halide vapour phase epitaxy.
• Dry etching of gallium nitride using CCl2F2, CCl4 and air.
• Excitonic Structure of GaN epitaxial films grown by Hydride-Vapor-Phase Epitaxy
• Edge electroluminescence of GaN-based pn structures grown on 6H-SiC
• MBE of GaN on 6H-SiC and GaAs substrates using hydrazine as a nitrogen source.
• Computer simulation of optical confinement in III-V nitride double heterostuctures.
• Nitride pn junctions grown on SiC substrates.
• Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.
• Growth of III-V nitrides by ECR-assisted MBE and fabrication of opto-electronic devices.
• Characterization of GaN grown with a high growth rate by RF-radical source molecular beam epitaxy.
• Initial stage of cubic GaN film growth on (001) GaAs by MOMBE using MMHy and TEG.
• The selective growth in hydride vapor phase epitaxy of GaN
• Relaxation and recombination dynamics in GaN/Al2O3 epilayers
• Exciton dynamics in GaN
• MOVPE production reactor technology for multiwafer SiC and GaN growth at very high temperatures
• Effect of nitrogen source conditions on the properties of GaN/saphire (0001) grown by ECR-MBE: PL and XRD study
• The growth of p-type epitaxial GaN films on saphire substrates in a production scale multi-wafer rotating disc MOCVD reactor
• Epitaxial growth of GaN films on silicon substrates by MOVPE
• Growth of zincblende GaN films by electron cyclotron resonance plasma enhanced chemical vapor deposition
• Crystal orietation of GaN films grown on (001) GaAs substrates by plasma-assisted metalorganic chemical vapor deposition
• Nitridation of GaAs (111)B substrates and heteroepitaxial growth of InN on the nitrided substrates
• Growth of GaN films by plasma-excited organometallic vapor phase epitaxy
• GaN-MOVPE: correlation between computer modelling and experimental data
• Mass-spectrometric study of gas reaction of trimethylgallium-monomethylhydrazine in a low-pressure metaloorganic chemical vapor deposition apparatus by in situ gas sampling
• LIF detection of excited-neutral N₂ from a nitrogen plasma source
• Growth characteristics of GaN films and initial layaers prepared by hot wall epitaxy
• Reflectance study of MOVPE grown GaN using triethylgallium and ammonia
• Preparation of AlN and GaN thin films by reactive ion beam sputtering and optical properties
• Optical properties of wurtzite GaN/AlGaN quantum wells
• Infrared reflectance and cathodoluminescence of AlN-GaN short period superlattice films
• Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition
• Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface
• Bandgap energy of cubic GaN
• Electronic structure of Ga_1-xIn_xN by the tight-binding method with nearest-neighbor s and p interactions
• Optical characterization of the free electron gas in bulk single crystals of GaN by means of Raman scattering and infrared reflectivity: evidence of phonon-plasmon coupled modes
• Characterization of GaN epitaxial films by Raman microprobe
• Raman and micro-Raman spectroscopy of GaN layers deposited on sapphire
• Dislocation in MOCVD-grown GaN films on saphire
• Ab initio calculation of structural and dynamical properties of AlN
• Investigation of optical properties of InN grown by atomic layer epitaxy
• RBS spectra of InN films grown on saphire substrate
• Fabrication of blue and green nitride light-emitting diodes
• Electronics devices based on GaN-AlGaN material system
• The state of SiC:GaN-based blue LEDs
• Degradation mechanisms of AlGaN/InGaN/GaN blue light emittig diodes
• Violet light emission from GaN/Al_0.05Ga_0.95N injection diode grown on 6H-SiC substrate by low-pressure MO-VPE
• Theoretical analisis of cubic GaInN/GaN/AlGaN quantum well lasers
• Design of GaN-based surface emitting laser with low threshold operation
• Doping and isolation of GaN, InGaN an InAlN using ion implantation
• Remote plasma hydrogenation of Mg-doped GaN
• Hydrogen diffusion and complex formation in GaN
• X-ray photoelectron spectroscopy of GaN layer formed on GaAs by NH₃-plasma nitridation and successive eximer-laser irradiation
• low power loss 4H-SiC Schottky rectifiers with high blocking voltage

1997

• Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence
• Controlled Growth of SiC and GaN by Sublimation Sandwich Method
• Porous GaN

last updated Thursday, February 14, 2002 1:48:13 PM.
© 2001 The Materials Research Society