Data for reference bergman-iopconf-142-931

Exciton dynamics in GaN

J. P. Bergman, B. Monemar, H. Amano, I. Akasaki, K. Hiramatsu, N. Sawaki, T. Detchprohm

Institute of Physics Conference Series 142(5), 931 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  2. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Wednesday, June 18, 1997 1:49:28 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 6:23:43 PM.
© 1998 The Materials Research Society