Data for reference eckey-iopconf-142-927

Relaxation and recombination dynamics in GaN/Al2O3 epilayers

L. Eckey, R. Heitz, A. Hoffmann, I. Broser, B. K. Meyer, K. Hiramitsu, T. Detchprohm, H. Amano, I. Akasaki

Institute of Physics Conference Series 142(5), 927 (1996).

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This item is cited by the following items in the database:

  1. Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
  2. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Wednesday, June 18, 1997 1:49:18 PM

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