Data for reference schmits-iopconf-142-895

MOVPE production reactor technology for multiwafer SiC and GaN growth at very high temperatures

D. Schmits, E. Woelk, G. Strauch, R. Beccard, F. Schulte, H. Juergensen

Institute of Physics Conference Series 142, 895 (1996).

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This item is cited by the following items in the database:

  1. The role of gaseous species in group-III nitride growth

Contributed by S. Yu. Karpov from master.lek.ru. on Thursday, June 19, 1997 12:49:43 PM

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