Data for reference melnik-iopconf-142-863

High-quality GaN grown directly on SiC by halide vapour phase epitaxy.

YuV Melnik, IP Nikitina, AS Zubrilov, AA Sitnikova , YuG Musikhin, VA Dmitriev

Institute of Physics Conference Series 142(5), 863 (1996).

Single crystal layers of GaN were grown by HVPE without a buffer layer on SiC substrates. The structural quality of the GaN grown by HVPE was comparable to that for GaN obtained by MOCVD.

This item is cited by the following items in the database:

  1. GaN Based p‐n Structures Grown on SiC Substrates
  2. Fabrication of GaN mesa structures
  3. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  4. Electrical characteristics of GaN/6H-SiC n-p heterojunctions.
  5. Luminescent properties of gallium nitride layers grown by vapor-phase epitaxy in a chloride system on silicon carbide substrates
  6. Physical Properties of Bulk GaN Crystals Grown by HVPE
  7. Strain relaxation in GaN layers grown on porous GaN sublayers

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Thursday, May 30, 1996 7:13:34 AM
Modified by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Thursday, May 30, 1996 12:48:07 PM
Modified by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Monday, June 10, 1996 3:14:06 PM

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