Data for reference detchprohm-iopconf-142-859

The selective growth in hydride vapor phase epitaxy of GaN

T Detchprohm, T Kuroda, K Hiramatsu, N Sawaki, H Goto

Institute of Physics Conference Series 142, 859 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item cites the following items in the database:

  1. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

This item is cited by the following items in the database:

  1. Physical Properties of Bulk GaN Crystals Grown by HVPE
  2. Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
  3. Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Wednesday, June 11, 1997 5:40:11 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 10:23:46 AM.
© 1998 The Materials Research Society