Data for reference moustakas-iopconf-142-833

Growth of III-V nitrides by ECR-assisted MBE and fabrication of opto-electronic devices.

TD Moustakas, RP Vaudo, R Singh, D Korakakis, M Misra, A Sampath, ID Goepfert

Institute of Physics Conference Series 142, 833 (1996).

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This item is cited by the following items in the database:

  1. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, June 29, 1996 6:29:30 AM

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