Data for reference akasaki-iopconf-142-7

Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.

I Akasaki, H Amano, I Suemune

Institute of Physics Conference Series 142, 7 (1996).

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This item cites the following items in the database:

  1. Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga 1-xAl xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE
  2. p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation
  3. Electron beam effects on blue luminescence of zinc-doped GaN
  4. uv and blue electroluminescence from Al/GaN:Mg/GaN LED treated with low-energy electron beam irradiation (LEEBI)
  5. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
  6. Stimulated emission near ultraviolet at room temperature from a GaN film grown on sapphire by MOVPE using an AlN buffer layer
  7. Metalorganic vapor phase epitaxial growth and properties of GaN/Al 0.1Ga0.9N layered structures
  8. Highly p-typed Mg-doped GaN films grown with GaN buffer layer
  9. Electroluminescence in GaN
  10. Behaviour of Zn as dopant in the photoluminescence of Al xGa 1-xN
  11. Effect of Si on the photoluminescence of GaN

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Saturday, June 29, 1996 6:19:28 AM

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