Data for reference vassilevski-iopconf-142-1027

Dry etching of gallium nitride using CCl2F2, CCl4 and air.

KV Vassilevski, VE Sizov, AI Babanin, YuV Melnik, AS Zubrilov

Institute of Physics Conference Series 142(6), 1027 (1996).

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This item is cited by the following items in the database:

  1. GaN Based p‐n Structures Grown on SiC Substrates
  2. Optical Properties of Nitride-based Structures Grown on 6H-SiC
  3. Fabrication of GaN mesa structures
  4. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  5. Physical Properties of Bulk GaN Crystals Grown by HVPE

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Thursday, May 30, 1996 11:15:18 AM

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