Data for reference zubrilov-iopconf-142-1003

Edge electroluminescence of GaN-based pn structures grown on 6H-SiC

AS Zubrilov, DV Tsvetkov, VI Nikolaev, VA Soloviev, VA Dmitriev

Institute of Physics Conference Series 142, 1003 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item cites the following items in the database:

  1. SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates

This item is cited by the following items in the database:

  1. GaN Based p‐n Structures Grown on SiC Substrates
  2. Optical Properties of Nitride-based Structures Grown on 6H-SiC

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Monday, June 17, 1996 3:23:03 AM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 2:08:09 PM.
© 1998 The Materials Research Society