vermaut-iopconf-146-289

Data for reference vermaut-iopconf-146-289

Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates

P. Vermaut, P. Ruterana, G. Nouet, A. Salvador, H. Morkoc

Institute of Physics Conference Series 146, 289 (1995).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE

Contributed by A submitted manuscript, on October 6, 1997 5:53:01 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.