Data for reference dmitriev-iopconf-141-497

SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates

VA Dmitriev, KG Irvine, JA Edmond, et al.

Institute of Physics Conference Series 141, 497 (1995).

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This item is cited by the following items in the database:

  1. Edge electroluminescence of GaN-based pn structures grown on 6H-SiC
  2. Schottky Barriers on n-GaN Grown on SiC
  3. GaN Based p‐n Structures Grown on SiC Substrates
  4. Optical Properties of Nitride-based Structures Grown on 6H-SiC
  5. Fabrication of GaN mesa structures
  6. Physical Properties of Bulk GaN Crystals Grown by HVPE

Contributed by E. Hellman

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