Data for reference nikitina-iopconf-141-431

X-Ray Differential diffractometry applied to GaN grown on SiC

IP Nikitina, VA Dmitriev

Institute of Physics Conference Series 141, 431 (1995).

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This item is cited by the following items in the database:

  1. Optical Properties of Nitride-based Structures Grown on 6H-SiC
  2. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
  3. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.

Contributed by Andrej E. Nikolaev from shuttle.ioffe.rssi.ru. on Monday, June 17, 1996 3:53:07 AM

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