Data for reference porowski-iopconf-137-369

Prospects for high-pressure crystal growth of III-V nitrides

S Porowski, J Jun, P Perlin, I Grzegory, H Teissere, T Suski

Institute of Physics Conference Series 137, 369 (1994).

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This item cites the following items in the database:

  1. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
  2. High Pressure Thermodynamics of GaN
  3. X-Ray Examination of GaN Single Crystals Grown at High Hydrostatic Pressure
  4. Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties
  5. Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure
  6. The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process
  7. Calculation of Ternary Phase Diagrams of III-V Systems

This item is cited by the following items in the database:

  1. Current status of GaN crystal growth by sublimation sandwich technique

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