Data for reference simawaki-iopconf-129-271

The Use of Selective Regrowth of HBTs

H. Simawaki

Institute of Physics Conference Series 129, 271 (1993).

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This item is cited by the following items in the database:

  1. 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor

Contributed by A submitted manuscript, on Wednesday, October 21, 1998 10:42:19 AM

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