Data for reference matsuoka-iopconf-106-141

Wide-gap Semiconductor (In,Ga)N

T. Matsuoka, H. Tanaka, T. Sasaki, A. Katsui

Institute of Physics Conference Series 106, 141 (1990).

Gallium Arsenide and Related Compounds 1989;

This item is cited by the following items in the database:

  1. Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
  2. High temperature surface degradation of III–V nitrides
  3. Epitaxial Growth of InN by Plasma-assisted MOCVD
  4. MOVPE of Thick InGaN on Sapphire Substrate
  5. Phase Separation in wurtzite In1-x-yGaxAlyN

Contributed by E. L. Piner from c11206-3131bl.ece.ncsu.edu. on Monday, January 13, 1997 5:08:41 PM

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