Data for reference pearton-ijmpb-8-1761

Reactive ion etching of III-V semiconductors

S. J. Pearton

International Journal of Modern Physics B 8, 1761 (1994).

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This item is cited by the following items in the database:

  1. New plasma chemistries for etching GaN and InN: BI3 and BBr3

Contributed by A submitted manuscript, on March 3, 1998 5:00:10 PM

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