tsubouchi-ieeesu-32-634

Data for reference tsubouchi-ieeesu-32-634

Zero-temperature-coefficient SAW devices on AlN epitaxial films

K. Tsubouchi, N. Mikoshiba

IEEE Transactions on Sonics and Ultrasonics 32, 634 (1985).

The material constants of AlN have been determined using epitaxial films grown by a metal-organic chemical vapor deposition on sapphire and silicon substrates. Zero temperature coefficient SAW delay lines on AlN/Al2O3 combination have been experimentally fabricated. AlN is found to have a negative temperature coefficient of delay for SAW propagation. The reproducibility of this delay seems to depend on oxygen contamination in AlN film.

This item is cited by the following items in the database:

GaN, AlN, and InN: A review

Contributed by the Journalmaster. More information is available from NASA's ADS database, with bibcode 1985ITSU...32..634T

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