Data for reference balandin-ieeemtt-47-1413

Low flicker-noise GaN/AlGaN heterostructure field effect transistors for microwave communications

A. Balandin, S. V. Morozov, S. Cai, R. Li, K. L. Wang, G. Wijeratne, C. R. Viswanathan

IEEE Transactions on Microwave Theory and Techniques 47(8), 1413 (1999).

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This item is cited by the following items in the database:

  1. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

Contributed by A submitted manuscript, on Friday, August 1, 2003 5:32:22 PM

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