Data for reference bour-ieeejstqe-4-498

Characteristics of InGaN-AlGaN Multiple-Quantum-Well Laser Diodes

D. P. Bour, M. Kneissl, L. T. Romano, M. D. McCluskey, C. C. Van deWalle, B. S. Krusor, R. M. Donaldson, J. Walker, C. J. Dunnrowicz, N. M. Johnson

IEEE Journal on Selected Topics in Quantum Electronics 4, 498 (1998).

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This item is cited by the following items in the database:

  1. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
  2. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

Contributed by A submitted manuscript, on Monday, October 12, 1998 5:55:55 PM

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