Data for reference domen-ieeejstqe-4-490

Lasing Mechanism of InGaN-GaN-AlGaN MQW Laser Diode Grown on SiC by Low-Pressure Metal-Organic Vapor Phase Epitaxy

K. Domen, A. Kuramata, R. Soejima, K. Horino, S. Kubota, T. Tanahashi

IEEE Journal on Selected Topics in Quantum Electronics 4, 490 (1998).

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This item is cited by the following items in the database:

  1. Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions

Contributed by A submitted manuscript, on Monday, October 12, 1998 5:54:43 PM

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