1985

• Theory of the Temperature Dependence of the Threshold Current of an InGaAsP Laser
• Qualitative Evaluation of Gain and Losses in Quaternary Lasers

1989

• Identification of donors in GaAs by resonantly-excited high-field magnetospectroscopy

1992

• Analytic Expressions for the Reflection Delay, Penetration Depth, and Absorptance of Quarter-Wave Dielectric Mirrors
• Analytic Expressions for the Reflection Delay, Penetration Depth, and Absorptance of Quarter-Wave Dielectric Mirrors

1993

• Modal Reflection of Quarter-Wave Mirrors in Vertical-Cavity Lasers
• Experimental Study of Auger Recombination, Gain, and Temperature Sensitivity of 1. 5 μm Compressively Strained Semiconductor Lasers
• Modal Reflection of Quarter-Wave Mirrors in Vertical-Cavity Lasers

1995

• Scaling of Stark-Shifted Per-Carrier Nonlinearities in Multiple-Quantum-Well Device Structures

1998

• Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
• Effect of the (1010) Crystal Orientation on the Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
• Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
• InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices,

last updated Thursday, February 14, 2002 1:47:25 PM.
© 2001 The Materials Research Society