Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers

IEEE Journal of Quantum Electronics 34(3), 526 (1998).

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This item cites the following items in the database:

1. Theoretical study of room temperature optical gain in GaN strained quantum wells
2. k.p method for strained wurtzite semiconductors
3. III-V Nitrides for Electronic and Optoelectronic Applications
4. Stimulated emission and laser action in gallium nitride
5. Valence-band discontinuity between GaN and AlN measured by x-ray photoemission spectroscopy
6. The preparation and properties of vapor-deposited single-crystal-line GaN
7. Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
8. Refraction index measurements on AlN single crystals
9. Refractive Index of AlGaInN Alloys
10. Strain effects on valence band structure in wurtzite GaN quantum wells
11. GaN, AlN, and InN: A review
12. Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
13. First-principles calculations of effective-mass parameters of AlN and GaN
14. Valence subband structures of wurtzite GaN/AlGaN quantum wells
15. Epitaxially grown AlN and its optical band gap

This item is cited by the following items in the database:

1. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

Contributed by YC Yeo from soi.eecs.berkeley.edu. on Monday, May 4, 1998 11:57:32 PM

last updated Wednesday, May 4, 2005 11:28:22 AM.
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