Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

IEEE Journal of Quantum Electronics 34(11), 2224 (1998).

The valence subband structures and optical gain of uniaxial-strained wurtzite (WZ) GaN/AlGaN QWs are investigated using a numerical approach in which the subband structure modification and mixing due to the anisotropic strain in the QW plane are accounted. We show that for a QW laser structure with the optical cavity along the x-axis, uniaxial compressive strain in the y-direction shows greater improvement than uniaxial tensile strain in the x- direction at a fixed carrier concentration or current density.

This item cites the following items in the database:

1. Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,
2. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
3. k.p method for strained wurtzite semiconductors
4. Strain Effect on electronic and optical properties of GaN/AlGaN QW Lasers
5. Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry
6. Optical properties of GaN epilayers on sapphire
7. Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers
8. Optical properties of tensile-strained wurtzite GaN epitaxial layers
9. Valence band splittings and band offsets of AlN, GaN, and InN
10. First-principles calculations of effective-mass parameters of AlN and GaN
11. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
12. Theoretical prediction of GaN lasing and temperature sensitivity
13. Theory of laser gain in group-III nitrides
14. Theory of optical gain in ideal GaN heterostructure lasers
15. Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method
16. Strain effects on valence band structure in wurtzite GaN quantum wells
17. Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
18. Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
19. Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
20. Symmetry and Strain-induced Effects in Semiconductors
21. Optical gain for wurtzite GaN with anisotropic strain in C plane
22. The preparation and properties of vapor-deposited single-crystal-line GaN
23. Epitaxially grown AlN and its optical band gap
24. Properties of Group III Nitrides
25. GaN, AlN, and InN: A review
26. Donor-acceptor pair recombination in GaN
27. Absorption, reflectance, and luminescence of GaN epitaxial layers

Contributed by YC Yeo from fujikun.eecs.berkeley.edu. on Friday, January 15, 1999 9:20:08 PM

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