yeo-ieeejqe-34-1270

Data for reference yeo-ieeejqe-34-1270

Effect of the (1010) Crystal Orientation on the Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers

YC Yeo, TC Chong, MF Li

IEEE Journal of Quantum Electronics 34(7), 1270 (1998).

We analyze the valence subband structures of (1010) -oriented wurtzite (WZ) GaN/AlGaN QWs using the multi-band effective- mass theory and calculate the optical gain taking into account the subband structure modification due to the crystal orientation effect and the pseudomorphic strain which is anisotropic in the QW plane. We show that the (1010) QW is capable of achieving lower transparency current densities than the (0001)QW. Thus, the (1010) QW could be useful in improving the threshold performance of WZ GaN-based QW lasers.

Contributed by YC Yeo from soi.eecs.berkeley.edu. on Monday, June 29, 1998 6:46:00 PM

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